WMBT5551LT1データシート： NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V

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WMBT5551LT1データシート規格

メーカー : WingShing

パッキン : SOT-23

ピン : 3

温度 : 分 0 °C | マックス 0 °C

サイズ : 39 KB

アプリケーション : NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V