パス:okデータシート > 半導体データシート > IRデータシート > IR-37
IRF520NL IRGP450UD2 309UR120 ST203S12MFJ2L IRFR6215 IRFU5305 SD103N25S15PSC SD253N08S15MSV 309URA120P3 300UF160PD ST303S04MFN0 SD203N08S10MBC IRF1010EL IR2113-1 SD600N20MTC SD203N08S20PSC SD1553C22S30K SD153N16S10PV SD500N45MC SD203R08S20MBC SD103R14S10PC ST2100C30R1L SD103R16S2
パートいいえ | メーカー | アプリケーション |
---|---|---|
IRFBF20 | IR | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A |
IRU1010-25CD | IR | 1A low dropout positive fixed 2.5V regulator |
IRF520NL | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A |
IRGP450UD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
309UR120 | IR | Standard recovery diode |
ST203S12MFJ2L | IR | Inverter grade thyristor |
IRFR6215 | IR | HEXFET power MOSFET. VDSS = -150V, RDS(on) = 0.295 Ohm, ID = -13A |
IRFU5305 | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.065 Ohm, ID = -31A |
SD103N25S15PSC | IR | Fast recovery diode |
SD253N08S15MSV | IR | Fast recovery diode |
309URA120P3 | IR | Standard recovery diode |
300UF160PD | IR | Standard recovery diode |
ST303S04MFN0 | IR | Inverter grade thyristor |
SD203N08S10MBC | IR | Fast recovery diode |
IRF1010EL | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. |
IR2113-1 | IR | High and low side driver |
SD600N20MTC | IR | Standard recovery diode |
SD203N08S20PSC | IR | Fast recovery diode |
SD1553C22S30K | IR | Fast recovery diode |
SD153N16S10PV | IR | Fast recovery diode |
SD500N45MC | IR | Standard recovery diode |
SD203R08S20MBC | IR | Fast recovery diode |
SD103R14S10PC | IR | Fast recovery diode |
ST2100C30R1L | IR | Phase control thyristor |
SD103R16S20MV | IR | Fast recovery diode |
IRHN9130 | IR | HEXFET transistor |
ST730C16L0L | IR | Phase control thyristor |
IRF1010E | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. |
SD150OC20L | IR | Standard recovery diode |
SD203N04S15MC | IR | Fast recovery diode |