パス:okデータシート > 半導体データシート > IRデータシート > IR-41
160P3 309U200P2 IRG4PH20K 302U160YPD ST230C08C1 PVT412S SD153N12S10MBV IRG4BC40 SD400N08PC SD453R12S20MC SD600N25PSC 303U120P2 ST180C18C2 SD153N12S10PSV 307U250P3 SD400R08PSC ST183S08PFN2L IRFR9024TR SD403C08S10C IRFZ44NSTRL ST330C08C2 SD203R20S15PBC ST333C04CHK1 SD203N04S10MSC S
パートいいえ | メーカー | アプリケーション |
---|---|---|
SD203N16S15MBV | IR | Fast recovery diode |
307UR160P3 | IR | Standard recovery diode |
309U200P2 | IR | Standard recovery diode |
IRG4PH20K | IR | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A |
302U160YPD | IR | Standard recovery diode |
ST230C08C1 | IR | Phase control thyristor |
PVT412S | IR | HEXFET power MOSFET photovoltaic relay |
SD153N12S10MBV | IR | Fast recovery diode |
IRG4BC40 | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A |
SD400N08PC | IR | Standard recovery diode |
SD453R12S20MC | IR | Fast recovery diode |
SD600N25PSC | IR | Standard recovery diode |
303U120P2 | IR | Standard recovery diode |
ST180C18C2 | IR | Phase control thyristor |
SD153N12S10PSV | IR | Fast recovery diode |
307U250P3 | IR | Standard recovery diode |
SD400R08PSC | IR | Standard recovery diode |
ST183S08PFN2L | IR | Inverter grade thyristor |
IRFR9024TR | IR | Power MOSFET, 60V, 8.8A |
SD403C08S10C | IR | Fast recovery diode |
IRFZ44NSTRL | IR | N-channel power MOSFET for fast switching applications, 55V, 49A |
ST330C08C2 | IR | Phase control thyristor |
SD203R20S15PBC | IR | Fast recovery diode |
ST333C04CHK1 | IR | Inverter grade thyristor |
SD203N04S10MSC | IR | Fast recovery diode |
SD103R08S20MSC | IR | Fast recovery diode |
IRFIZ34N | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.04 Ohm, ID = 21A |
SD453R25S30MTC | IR | Fast recovery diode |
ST280CH04C0 | IR | Phase control thyristor |
SD153N04S10PSV | IR | Fast recovery diode |