BUT12同様の

  • BUT11
    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
  • BUT11
    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
  • BUT11A
    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
  • BUT11AF
    • NPN silicon diffused power transistor. For switching power circuits
  • BUT12
    • NPN silicon diffused power transistor. For switching power circuits
  • BUT12A
    • NPN silicon diffused power transistor. For switching power circuits
  • BUT12AF
    • NPN silicon diffused power transistor. For switching power circuits

BUT12データシート規格

メーカー : WingShing 

パッキン : TO-220 

ピン : 3 

温度 : 分 0 °C | マックス 0 °C

サイズ : 71 KB

アプリケーション : NPN silicon diffused power transistor. For switching power circuits 

BUT12 PDFダウンロード