UT7Q512K-UWC同様の

  • UT7Q512
    • 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
  • UT7Q512
    • 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
  • UT7Q512K-UCA
    • "512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped."
  • UT7Q512K-UCA
    • 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped.
  • UT7Q512K-UCC
    • 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold.
  • UT7Q512K-UCX
    • 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.
  • UT7Q512K-UPC
    • 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
  • UT7Q512K-UPC
    • 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.

UT7Q512K-UWCデータシート規格

メーカー : UTMC 

パッキン : Ceramic flatpack 

ピン : 32 

温度 : 分 -40 °C | マックス 125 °C

サイズ : 117 KB

アプリケーション : 512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold. 

UT7Q512K-UWC PDFダウンロード