F1076データシート： 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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F1076データシート規格

メーカー : Polyfet RF

パッキン :

ピン : 4

温度 : 分 -65 °C | マックス 150 °C

サイズ : 41 KB

アプリケーション : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor