1N5381B同様の

  • 1N5348B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 11V, Izt = 125mA
  • 1N5349B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 12V, Izt = 100mA
  • 1N5350B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA
  • 1N5351B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
  • 1N5351B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
  • 1N5352B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 15V, Izt = 75mA
  • 1N5354B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 17V, Izt = 70mA
  • 1N5355B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

1N5381Bデータシート規格

メーカー : PanJit 

パッキン : DO-201AE 

ピン : 2 

温度 : 分 -55 °C | マックス 150 °C

サイズ : 336 KB

アプリケーション : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 130V, Izt =10mA 

1N5381B PDFダウンロード