パス：OKデータシート > 半導体データシート > NTE Electronicデータシート > NTE623
NTE623データシート： Silicon rectifier, fast recovery,dual, center tap. Peak repetitive reverse voltage 200V. Average rectifier forward current 3A (per diode), 6A (total device).
NTE623同様の
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE623データシート規格
メーカー : NTE Electronic
パッキン : TO220
ピン : 3
温度 : 分 -65 °C | マックス 175 °C
サイズ : 19 KB
アプリケーション : Silicon rectifier, fast recovery,dual, center tap. Peak repetitive reverse voltage 200V. Average rectifier forward current 3A (per diode), 6A (total device).
NTE623 PDFダウンロード