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NTE5570同様の

  • NTE5198A
    • "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 24V. Zener test current Izt = 105mA."
  • NTE5183A
    • "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 8.2V. Zener test current Izt = 305mA."
  • NTE5945
    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 15A.
  • NTE5227A
    • "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 160V. Zener test current Izt = 16mA."
  • NTE5914
    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A.
  • NTE5045A
    • "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 68V, Zener test current Izt = 1.8mA."
  • NTE5322W
    • "Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 200V."
  • NTE5001A
    • "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 2.5V, Zener test current Izt = 20mA."

NTE5570データシート規格

メーカー : NTE Electronic 

パッキン :  

ピン : 4 

温度 : 分 -40 °C | マックス 125 °C

サイズ : 23 KB

アプリケーション : Silicon controlled rectiifier for phase control applications. Repetitive peak voltage, Vrrm = 200V. Non - repetitive peak reverse blocking voltage, Vrsm = 500V. RMS on-state current, Itrms = 125A. 

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