BUZ906X4Sデータシート： P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.

BUZ906X4S同様の

BUZ903P
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ906X4Sデータシート規格

メーカー : Magnatec

パッキン : SOT227

ピン : 4

温度 : 分 0 °C | マックス 150 °C

サイズ : 36 KB

アプリケーション : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.