BUL52A同様の

  • BUL52A
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
  • BUL54B
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
  • BUL52B
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
  • BUL54A
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.

BUL52Aデータシート規格

メーカー : Magnatec 

パッキン : TO220 

ピン : 3 

温度 : 分 0 °C | マックス 150 °C

サイズ : 20 KB

アプリケーション : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. 

BUL52A PDFダウンロード