| パートいいえ | メーカー | アプリケーション |
|---|
| SMDJ28A | MDE Semiconductor | 28.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SA45A | MDE Semiconductor | 45.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 5KP100A | MDE Semiconductor | 100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 5KP100 | MDE Semiconductor | 100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX40-64.0CA | MDE Semiconductor | 64.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMAJ30 | MDE Semiconductor | 30.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 3KP8.5A | MDE Semiconductor | 8.50V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMLJ58 | MDE Semiconductor | 58.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE56 | MDE Semiconductor | 45.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-14.0C | MDE Semiconductor | 14.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 20KW180A | MDE Semiconductor | 180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 1.5KE7.5 | MDE Semiconductor | 6.05V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| MDE-40D391K | MDE Semiconductor | 390V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc |
| 1.5KE250A | MDE Semiconductor | 214.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 1.5KE8.2A | MDE Semiconductor | 7.02V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMAJ22 | MDE Semiconductor | 22.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 5KP7.0 | MDE Semiconductor | 7.00V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1.5KE33A | MDE Semiconductor | 28.20V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 5KP11 | MDE Semiconductor | 11.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 30KW108 | MDE Semiconductor | 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX40-64.0C | MDE Semiconductor | 64.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 5KP7.5A | MDE Semiconductor | 7.50V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| P4KE82A | MDE Semiconductor | 70.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-7D221M | MDE Semiconductor | 220V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc |
| SMLJ43 | MDE Semiconductor | 43.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-10.0C | MDE Semiconductor | 10.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ7.5A | MDE Semiconductor | 7.50V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE10 | MDE Semiconductor | 8.10V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMLJ7.0 | MDE Semiconductor | 7.00V; 10mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SA6.0A | MDE Semiconductor | 6.00V; 10mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
