| パートいいえ | メーカー | アプリケーション |
|---|
| P4KE51A | MDE Semiconductor | 43.60V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE130 | MDE Semiconductor | 105.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| MDE-25S471K | MDE Semiconductor | 470V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| MDE-25D781K | MDE Semiconductor | 780V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc |
| MAX20-7.0CA | MDE Semiconductor | 7.00V; 50mA ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| ICTE-45C | MDE Semiconductor | 45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX20-85.0CA | MDE Semiconductor | 85.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ20 | MDE Semiconductor | 20.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE170 | MDE Semiconductor | 138.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-28.0C | MDE Semiconductor | 28.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ120A | MDE Semiconductor | 120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ5.0A | MDE Semiconductor | 5.00V; 10mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 5KP170A | MDE Semiconductor | 170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1.5KE75 | MDE Semiconductor | 60.70V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 20KW30A | MDE Semiconductor | 30.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 15KW60A | MDE Semiconductor | 60.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 5KP11A | MDE Semiconductor | 11.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-25S201K | MDE Semiconductor | 200V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| SMLJ90A | MDE Semiconductor | 90.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE68 | MDE Semiconductor | 55.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP33A | MDE Semiconductor | 33.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-7D330M | MDE Semiconductor | 33V; max peak current500A; metal oxide varistor. Standard D series 7mm disc |
| SMLJ10 | MDE Semiconductor | 10.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KP30A | MDE Semiconductor | 30.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 20KW112 | MDE Semiconductor | 112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-14D151K | MDE Semiconductor | 150V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc |
| 5KP40A | MDE Semiconductor | 40.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMAJ9.0A | MDE Semiconductor | 9.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 20KW104 | MDE Semiconductor | 104.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 20KW80 | MDE Semiconductor | 80.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
