| パートいいえ | メーカー | アプリケーション |
|---|
| SMLJ48A | MDE Semiconductor | 48.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P6KE10 | MDE Semiconductor | 8.10V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMAJ110 | MDE Semiconductor | 110.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ11A | MDE Semiconductor | 11.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE180A | MDE Semiconductor | 154.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SAC22 | MDE Semiconductor | 22.00V; 14.0A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
| MDE-40D951K | MDE Semiconductor | 950V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc |
| SMCJ78A | MDE Semiconductor | 78.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE47 | MDE Semiconductor | 38.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE33A | MDE Semiconductor | 28.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE6.8 | MDE Semiconductor | 5.50V; 10mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ130A | MDE Semiconductor | 130.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE440A | MDE Semiconductor | 376.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 20KW36 | MDE Semiconductor | 36.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMLJ70A | MDE Semiconductor | 70.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-20D122K | MDE Semiconductor | 1200V; max peak current75000A; metal oxide varistor. Standard D series 20mm disc |
| 20KW172 | MDE Semiconductor | 172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 1.5KE62A | MDE Semiconductor | 53.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 15KP26 | MDE Semiconductor | 26.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX40-11.0CA | MDE Semiconductor | 11.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMCJ51A | MDE Semiconductor | 51.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-32D201K | MDE Semiconductor | 200V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
| 1.5KE10 | MDE Semiconductor | 8.10V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SA26 | MDE Semiconductor | 26.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMAJ6.5 | MDE Semiconductor | 6.50V; 10mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 5KP8.0 | MDE Semiconductor | 8.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-32D621K | MDE Semiconductor | 620V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
| SMAJ13 | MDE Semiconductor | 13.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ100 | MDE Semiconductor | 100.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SA36A | MDE Semiconductor | 36.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
