| パートいいえ | メーカー | アプリケーション |
|---|
| 3KP9.0 | MDE Semiconductor | 9.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 15KW22A | MDE Semiconductor | 22.0V; 10mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMAJ24A | MDE Semiconductor | 24.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-7D681M | MDE Semiconductor | 680V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc |
| SMAJ40 | MDE Semiconductor | 40.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX40-30.0CA | MDE Semiconductor | 30.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP18 | MDE Semiconductor | 18.0V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 3KP26A | MDE Semiconductor | 26.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMBJ10 | MDE Semiconductor | 10.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMDJ45A | MDE Semiconductor | 45.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-32D431K | MDE Semiconductor | 430V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
| SMCJ40 | MDE Semiconductor | 40.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1N6387 | MDE Semiconductor | 22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-14D821K | MDE Semiconductor | 820V; max peak current5000A; metal oxide varistor. Standard D series 14mm disc |
| 20KW160 | MDE Semiconductor | 160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMCJ8.5 | MDE Semiconductor | 8.50V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ64A | MDE Semiconductor | 64.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-20D431K | MDE Semiconductor | 430V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc |
| 30KW168A | MDE Semiconductor | 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMAJ11 | MDE Semiconductor | 11.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| LCE15 | MDE Semiconductor | 15.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| MDE-7D560M | MDE Semiconductor | 56V; max peak current500A; metal oxide varistor. Standard D series 7mm disc |
| 1.5KE120 | MDE Semiconductor | 97.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 5KP36A | MDE Semiconductor | 36.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMBJ17A | MDE Semiconductor | 17.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-110.0C | MDE Semiconductor | 110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMCJ64 | MDE Semiconductor | 64.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ16A | MDE Semiconductor | 16.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 5KP160A | MDE Semiconductor | 160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 30KW60 | MDE Semiconductor | 60.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
