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1N5530B同様の

  • 1N5518
    • 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-20% tolerance.
  • 1N5518A
    • 0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance.
  • 1N5518B
    • 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance.
  • 1N5518C
    • 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-2% tolerance.
  • 1N5518D
    • 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance.
  • 1N5519
    • 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-20% tolerance.
  • 1N5519A
    • 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance.
  • 1N5519B
    • "0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance."

1N5530Bデータシート規格

メーカー : JGD 

パッキン : DO-35 

ピン : 2 

温度 : 分 -65 °C | マックス 200 °C

サイズ : 267 KB

アプリケーション : 0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-5% tolerance. 

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