IRF3708S同様の

  • IRF3205
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF3205L
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF3205S
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF330
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
  • IRF330
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
  • IRF3315
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
  • IRF3315L
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
  • IRF3315L
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A

IRF3708Sデータシート規格

メーカー : IR 

パッキン : DDPak 

ピン : 3 

温度 : 分 -55 °C | マックス 175 °C

サイズ : 151 KB

アプリケーション : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12 mOhm, ID = 62A 

IRF3708S PDFダウンロード