HLB123I同様の

  • HLB120A
    • Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
  • HLB121I
    • Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
  • HLB122I
    • Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
  • HLB122J
    • Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
  • HLB123I
    • Emitter to base voltage8V; NPN epitaxial planar transistor
  • HLB123T
    • Emitter to base voltage8V; NPN epitaxial planar transistor
  • HLB124E
    • Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
  • HLB125E
    • Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies

HLB123Iデータシート規格

メーカー : Hi Sincerity 

パッキン : TO-251 

ピン : 3 

温度 : 分 0 °C | マックス 0 °C

サイズ : 39 KB

アプリケーション : Emitter to base voltage8V; NPN epitaxial planar transistor 

HLB123I PDFダウンロード