パス：OKデータシート > 半導体データシート > EXICONデータシート > EC-10N20
EC-10N20データシート： N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N20同様の
- EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
- EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
- EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
- EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
- EC-10P20
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
- EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
- EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
- EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N20データシート規格
メーカー : EXICON
パッキン : TO3P
ピン : 3
温度 : 分 -55 °C | マックス 150 °C
サイズ : 249 KB
アプリケーション : N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N20 PDFダウンロード