パス：OKデータシート > 半導体データシート > Ceramateデータシート > 54S416T-6
54S416T-6データシート： High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
54S416T-6同様の
- 54S416T-5
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
- 54S416T-6
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
- 54S416T-7
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
54S416T-6データシート規格
メーカー : Ceramate
パッキン : TSOP
ピン : 54
温度 : 分 0 °C | マックス 70 °C
サイズ : 1126 KB
アプリケーション : High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
54S416T-6 PDFダウンロード