パス:okデータシート > 半導体データシート > UTMCデータシート > UTMC-100

R9651601QXA UT69R00012WCCR 5962R9656201QEX 5962H9652801VXA UT54ACS20PCA 5962R9655101VEX 5962-9655301VXA 5962R9475405QYC UT7C139C45GCC 5962G0153601QYC 5962H9475402VYC 5962-8957701VYX 5962F9684503QYA 5962H9583402QXC 5962H9654401VXA 5962H0150202QXX UT54ACTS08PCA 5962G0153601VYX 5962

UTMC データシートカタログ-100

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5962-9654101VEA UTMCRadHard MSI SMD. Dual J-K flip-flop. Class V, QML. Lead finish solder. Total dose none.
5962R9651601QXA UTMCRadHard MSI SMD. Hex inverter. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si).
UT69R00012WCCR UTMCRadHard microcontroller. 12MHz operating frequency. Mil temp. Lead finish gold. Total dose 1E5 rads(Si).
5962R9656201QEX UTMCRadHard MSI SMD. Synchronous 4-bit up-down BCD counter. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si).
5962H9652801VXA UTMCRadHard MSI SMD. Triple 3-input NOR gates. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si) .
UT54ACS20PCA UTMCRadHard MSI. Dual 4-input NAND. CMOS compatible I/O level. Lead finish solder.
5962R9655101VEX UTMCRadHard MSI SMD. Dual 4-input multiplexer w/three-state outputs. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si).
5962-9655301VXA UTMCRadHard MSI SMD. Quadruple 2 to 1 multiplexer. Class V, QML. Lead finish solder. Total dose none.
5962R9475405QYC UTMCRadiation Hardened PAL SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
UT7C139C45GCC UTMC4Kx9 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
5962G0153601QYC UTMCOctal 400 Mbps bus LVDS repeaterSMD. Total dose 5E5 rad(Si). QML class Q. Lead finish gold.
5962H9475402VYC UTMCRadiation Hardened PAL SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish gold.
5962-8957701VYX UTMCUT1553B BCRT/M bus controller/remote terminal/monitor SMD. Class designator QML V. Lead finish optional. Total dose none.
5962F9684503QYA UTMCDual-port SRAM SMD with busy flag. Lead finish solder. Class Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
5962H9583402QXC UTMCQuad receiver SMD. QML class Q. Lead finish gold. Total dose 1E6 rad(Si).
5962H9654401VXA UTMCRadHard MSI SMD. 3-line to 8-line decoder/demultiplexer. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si).
5962H0150202QXX UTMCRadHard 1750AR RISC microcontroller SMD. 16MHz, RH microcontroller. Class Q. Lead finish optional. Total dose 1E6 rads(Si).
UT54ACTS08PCA UTMCRadHard MSI. Quadruple 2-input AND. TTL compatible I/O level. Lead finish solder.
5962G0153601VYX UTMCOctal 400 Mbps bus LVDS repeaterSMD. Total dose 5E5 rad(Si). QML class V. Lead finish factory option.
5962F9687301QYA UTMCRadiation-hardenet 8Kx8 PROM SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 3E5rads(Si)
5962H3829436SXA UTMCRadiation-Hardened 8Kx8 SRAM SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish solder.
UT06MRA600 UTMCUT0.6uCRH/SRH commercial RadHard and strategic RadHard gate array.
5962R9652501VXC UTMCRadHard MSI SMD. Hex inverter schmit trigger. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si).
5962G9475408VYC UTMCRadiation Hardened PAL SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold.
UT28F64LVC55UCA UTMCRadiation-hardenet 3.3V, 8K x 8 PROM. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Mil temp. Lead finish solder.
UT54ACS85 UTMCRadiation-hardened 4-bit comparator.
5962G9475407QYC UTMCRadiation Hardened PAL SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
UT8Q512-IWA UTMC512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow.
5962R9475402QYA UTMCRadiation Hardened PAL SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish solder.
5962H9656901VRA UTMCRadHard MSI SMD. Octal buffer w/inverted three-state output. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si).

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