| パートいいえ | メーカー | アプリケーション |
|---|
| MUN5230DW1T1 | Leshan Radio | 50 V, dual bias resistor transistor |
| FR306G | Leshan Radio | 800 V, 3 A, fast GPP diode |
| SA24 | Leshan Radio | 24 V, 1 mA, 500 W, transient voltage suppressor |
| BAT54SWT1 | Leshan Radio | 30 V, dual schottky barrier diode |
| P6KE400 | Leshan Radio | 400 V, 1 mA, 600 W, transient voltage suppressor |
| MMBZ5232BLT1 | Leshan Radio | 5.6 V, 20 mA, 225 mW, semiconductor |
| FR153G | Leshan Radio | 200 V, 1.5 A fast GPP diode |
| MUN2134RT1 | Leshan Radio | 50 V, bias resistor transistor |
| 05WS6B | Leshan Radio | 400 mW, 5 mA, zener diode |
| MC74VHC1G09DTT1 | Leshan Radio | 2-input AND gate with open drain output |
| SMAJ26A | Leshan Radio | 26 V, 1 mA, transient voltage suppressor |
| BZX84C36LT1 | Leshan Radio | 36 V, 225 mW, semiconductor |
| 1N5270C | Leshan Radio | 91 V, 1.4 mA, zener diode |
| 1N5223B | Leshan Radio | 2.7 V, 20 mA, zener diode |
| 1N4761B | Leshan Radio | 75 V, zener diode |
| BA159 | Leshan Radio | 1000 V, 1 A, fast recovery diode |
| MTZJ27B | Leshan Radio | 27 V, 5 mA, zener diode |
| MUN2131T1 | Leshan Radio | 50 V, bias resistor transistor |
| RBV606G | Leshan Radio | 600 V, 6 A, bridge rectifier |
| BZX84C6V2LT1 | Leshan Radio | 6.2 V, 225 mW, semiconductor |
| SB140 | Leshan Radio | 40 V, 1 A, schottky barrier diode |
| 1.5KE7.5 | Leshan Radio | 7.5 V, 10 mA, 1500 W, transient voltage suppressor |
| MMBD2836LT1 | Leshan Radio | 75 V, monolithic dual switching diode |
| 1.5KE30A | Leshan Radio | 30 V, 1 mA, 1500 W, transient voltage suppressor |
| 1N746D | Leshan Radio | 3.3 V, 20 mA, zener diode |
| KBL404 | Leshan Radio | 400 V, 4 A, bridge rectifier |
| MTZJ33A | Leshan Radio | 33 V, 5 mA, zener diode |
| D10SB80 | Leshan Radio | 800 V, 10 A, bridge rectifier |
| MC74VHC1G32DFT1 | Leshan Radio | 2-input OR gate |
| 1N965C | Leshan Radio | 15 V, zener diode |
