パス:okデータシート > 半導体データシート > IRデータシート > IR-93
20 ST303C08CHK0 ST303C04LHK2 ST300C20L3 SD153N10S10MSV ST2100C38R0L SD103R12S10PC 303URA120P2 300HF40PS IR2112 SD600N20PTC 307U200P3 ST730C18L3 SD153R16S10MBV 70U120AYPD IRF7807A SD300N28MC ST180C16C0 IRG4BC30K-S ST3230C12R1L IRFP448 301U80P2 SD200R20MSC SD103R04S15MBC ST333S08PF
パートいいえ | メーカー | アプリケーション |
---|---|---|
ST203C12CHH2L | IR | Inverter grade thyristor |
305UR120 | IR | Standard recovery diode |
ST303C08CHK0 | IR | Inverter grade thyristor |
ST303C04LHK2 | IR | Inverter grade thyristor |
ST300C20L3 | IR | Phase control thyristor |
SD153N10S10MSV | IR | Fast recovery diode |
ST2100C38R0L | IR | Phase control thyristor |
SD103R12S10PC | IR | Fast recovery diode |
303URA120P2 | IR | Standard recovery diode |
300HF40PS | IR | Standard recovery diode |
IR2112 | IR | High and low side driver |
SD600N20PTC | IR | Standard recovery diode |
307U200P3 | IR | Standard recovery diode |
ST730C18L3 | IR | Phase control thyristor |
SD153R16S10MBV | IR | Fast recovery diode |
70U120AYPD | IR | Standard recovery diode |
IRF7807A | IR | HEXFET chip-set for DC-DC converters. VDSS = 30V. RDS(on) = 25mOhm. |
SD300N28MC | IR | Standard recovery diode |
ST180C16C0 | IR | Phase control thyristor |
IRG4BC30K-S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A |
ST3230C12R1L | IR | Phase control thyristor |
IRFP448 | IR | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.60 Ohm, ID = 11 A |
301U80P2 | IR | Standard recovery diode |
SD200R20MSC | IR | Standard recovery diode |
SD103R04S15MBC | IR | Fast recovery diode |
ST333S08PFM0L | IR | Inverter grade thyristor |
303URA160P4 | IR | Standard recovery diode |
IRG4PC50U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A |
SD103N25S20PSC | IR | Fast recovery diode |
SD403C04S10C | IR | Fast recovery diode |