パス:okデータシート > 半導体データシート > IRデータシート > IR-18
1 305UA80P2 SD300N16MBV IRGB420UD2 ST280S06M2VL SD103R14S15MC 309U80 IRF820AL ST730C08L1 ST280S06M1V SD253N14S20PBV 303UR160P2 SD233R40S50MSC IRF460 SD153R16S10MSV SD253N08S15PV 181RKI40S90 ST230S14P0 ST230S12P2VL SD150N12MBC ST330C16L1 IRF3205 IRFI360 IRFD9220 307URA250P5 301UA1
パートいいえ | メーカー | アプリケーション |
---|---|---|
305UR200P5 | IR | Standard recovery diode |
ST300C16C1 | IR | Phase control thyristor |
305UA80P2 | IR | Standard recovery diode |
SD300N16MBV | IR | Standard recovery diode |
IRGB420UD2 | IR | Insulated gate bipolar transistor |
ST280S06M2VL | IR | Phase control thyristor |
SD103R14S15MC | IR | Fast recovery diode |
309U80 | IR | Standard recovery diode |
IRF820AL | IR | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A |
ST730C08L1 | IR | Phase control thyristor |
ST280S06M1V | IR | Phase control thyristor |
SD253N14S20PBV | IR | Fast recovery diode |
303UR160P2 | IR | Standard recovery diode |
SD233R40S50MSC | IR | Fast recovery diode |
IRF460 | IR | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A |
SD153R16S10MSV | IR | Fast recovery diode |
SD253N08S15PV | IR | Fast recovery diode |
181RKI40S90 | IR | Phase control thyristor |
ST230S14P0 | IR | Phase control thyristor |
ST230S12P2VL | IR | Phase control thyristor |
SD150N12MBC | IR | Standard recovery diode |
ST330C16L1 | IR | Phase control thyristor |
IRF3205 | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A |
IRFI360 | IR | HEXFET transistor (N-channel). BVDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25 A |
IRFD9220 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -0.56 A |
307URA250P5 | IR | Standard recovery diode |
301UA120P3 | IR | Standard recovery diode |
IRF7807D2 | IR | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =25mOhm |
ST333S04MFM1 | IR | Inverter grade thyristor |
IRFP31N50L | IR | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.15 Ohm, ID = 31 A |