パス:okデータシート > 半導体データシート > IRデータシート > IR-145
IRGBC30K ST1900C48R1L IRF644 ST2100C38R0 300U60A IRLR120N ST180S16M0L 305URA200P5 ST183C08CHK2L IRFU2405 SD1553C18S20K ST180C08C3L ST223S08MFN2 ST230S04M1L IRF5Y1310CM ST333C08LHK3L IR6226 JANTX2N6760 SD600R12MC ST333C08CHK0 ST183C08CHK3 SD103R08S20MBC 200HF120PBV IRGPH20S SD300N
パートいいえ | メーカー | アプリケーション |
---|---|---|
SD500N36MTC | IR | Standard recovery diode |
IRF7707 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -4.5V. RDS(on) = 33mOhm, ID = -6.0A @ VGS = -2.5V. |
IRGBC30K | IR | Insulated gate bipolar transistor |
ST1900C48R1L | IR | Phase control thyristor |
IRF644 | IR | Power MOSFET, 250V, 14A |
ST2100C38R0 | IR | Phase control thyristor |
300U60A | IR | Standard recovery diode |
IRLR120N | IR | N-channel power MOSFET, 100V, 10A |
ST180S16M0L | IR | Phase control thyristor |
305URA200P5 | IR | Standard recovery diode |
ST183C08CHK2L | IR | Inverter grade thyristor |
IRFU2405 | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.016 Ohm, ID = 56A |
SD1553C18S20K | IR | Fast recovery diode |
ST180C08C3L | IR | Phase control thyristor |
ST223S08MFN2 | IR | Inverter grade thyristor |
ST230S04M1L | IR | Phase control thyristor |
IRF5Y1310CM | IR | HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A |
ST333C08LHK3L | IR | Inverter grade thyristor |
IR6226 | IR | Intelligent high side mosfet power switch |
JANTX2N6760 | IR | HEXFET power mosfet |
SD600R12MC | IR | Standard recovery diode |
ST333C08CHK0 | IR | Inverter grade thyristor |
ST183C08CHK3 | IR | Inverter grade thyristor |
SD103R08S20MBC | IR | Fast recovery diode |
200HF120PBV | IR | Standard recovery diode |
IRGPH20S | IR | Insulated gate bipolar transistor |
SD300N28PBC | IR | Standard recovery diode |
300UR160APD | IR | Standard recovery diode |
303U250P3 | IR | Standard recovery diode |
301UA200P4 | IR | Standard recovery diode |