| パートいいえ | メーカー | アプリケーション |
|---|
| G8340-11 | Hamamatsu | Supply voltage0.3-3.8V; InGaAs PIN photodiode with preamp pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| R2228 | Hamamatsu | Spectral responce 300 to 900nm; 1500Vdc; anode current 0.1mA; photomultiplier tube |
| G4176 | Hamamatsu | MAx Bias volatge +-10V; pulesd light 50mW; ultrafast MSM photodetectors. For optical high-speed waveform measurements, optical communications |
| L8828-71 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
| F2224-34 | Hamamatsu | Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics |
| G8376-05 | Hamamatsu | Reverse voltage20V; spectral response range0.9-1.7um; InGaAs PIN photodiode standard type. For NIR (near infrared) photometry, optical communication |
| R636-10 | Hamamatsu | Spectral responce185-930nm; between anode and cathode1500Vdc; 0.001mA; photomultiplier tube |
| R1463P | Hamamatsu | Stectral responce 185 to 850nm; 1250Vdc; anode current 0.03mA; hotomultiplier tube |
| G8194-23 | Hamamatsu | Spectral response range0.9-1.7um; reverse voltage20V; InGaAs PIN photodiode receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH, WDM |
| P9217 | Hamamatsu | Active area1x5mm; 100V; 1300mA; PbS photoconductive detector infrared detector utilizing photoconductive effects |
| PLP10-038 | Hamamatsu | High-repetition up to 100MHz picosecond light pulser; wavelength range from 375 to 1,550nm |
| G8340-22 | Hamamatsu | Supply voltage0.3-3.8V; InGaAs PIN photodiode with preamp pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| C5331-03 | Hamamatsu | Frequency bandwidth 4k to 100M Hz; operates an APD with single 5V supply |
| L2388 | Hamamatsu | 80mA; 5V; 1.0A; infrared LED. For auto-focus, optical switches and automatic control systems |
| L2482-01 | Hamamatsu | 100W; super-quiet mercury-xenon lamp deep UV light source for precision measurement |
| S1133-01 | Hamamatsu | Active area2.4x2.8mm; 10V; 1300mA; Si photodiode with low dark current |
| G5852-21 | Hamamatsu | Reverse voltage2V; spectral response range0.9-2.1um; InGaAs PIN photodiode long wavelength type (up to 2.1um). For NIR (near infrared) photometry, gas analyzer, water content analyzer |
| R928 | Hamamatsu | Spectral responce185-900nm; between anode and cathode1500Vdc; 0.1mA; photomultiplier tube |
| C7884-20 | Hamamatsu | Supply voltage +-12/+-15V; driver circuit for NMOS linear image sensor |
| R5509-43 | Hamamatsu | Spectral responce300-1400nm; between anode and cathode1750Vdc; NIR photomultiplier tube with exclusive coolers |
| H7260K-03 | Hamamatsu | Spectral responce185-650nm; between anode and cathode800Vdc; linear array multianode PMT and assembly |
| C4880-21-22W | Hamamatsu | 12-bit idigital CCD camera. For X-ray scintillator readout, readout of various fluorescences, X-ray diffraction readout, neutron radiography |
| C7390-12 | Hamamatsu | Effective X-ray tube voltage range40 to 160kV; resolution 512mm1280pixels; 256mm640pixels; W-ray line sensor camera |
| P380-5R | Hamamatsu | Supply voltage100Vdc; 30mW; CdS photoconductive cell resin coating type. Standard type designed for general purpose, wide application |
| P1096-06 | Hamamatsu | 100Vdc; 100mW; CdS photoconductive cell resin coating type. Standard type designed to withstand high voltage and high power |
| P791-13 | Hamamatsu | 100V; PbSe photoconductive detector deflection capability up to 5um range (TE-cooled type) |
| H5783-06 | Hamamatsu | Input voltage 11.5-15.5V; photosensor module in metal package PMT |
| L2402-02 | Hamamatsu | 65mA; 5V; 1.0A; infrared LED. For optical switches and automatic control systems |
| R5900U-00-L16 | Hamamatsu | Spectral responce300-650nm; between anode and cathode800Vdc; linear array multianode PMT and assembly |
| F2813-22P | Hamamatsu | Rectangular MCP and assembly series. For detection and imaging of electron, ions, VUV lights, X-rays and V-rays mass spectroscopy, energy spectroscopy and high-speed response CRTs |
