パス:okデータシート > 半導体データシート > Diodesデータシート > Diodes-35

4KE91CA DB101 DDTA113TCA MMST6427 BZX84C3V3T MMBT2222AT BZX84C22TS BAS40W-05 1.5KE130A RS1K/KB MMSZ5250BS 1N5711W MMDT3906 US1K PBPC306 SMCJ75(C)A 1.5KE110CA SF81 MMBZ5241B DDA143TU BAT46W PBPC307 UG2003 RS1A/B BAT54BRW-7 MB25-1 GBJ2501 MMBZ5233BTS

Diodes データシートカタログ-35

パートいいえメーカーアプリケーション
RS2K/KA Diodes800V; 1.5A glass passivated fast recovery rectifier
DDTA123ZKA Diodes50V; 100mA PNP PRE-biased small signal surface mount transistor
P4KE91CA Diodes77.80V; 400W transient voltage suppressor
DB101 Diodes50V; 1.0A glass passivated bridge rectifier
DDTA113TCA Diodes50V; 100mA PNP PRE-biased small signal surface mount transistor
MMST6427 Diodes30V; 300mA NPN surface mount darlington transistor. Ideal for medium power amplification and switching
BZX84C3V3T Diodes3.3V; 150mW surface mount zener diode
MMBT2222AT Diodes75V; 600mA NPN small signal surface mount transistor
BZX84C22TS Diodes22V; 200mW triple surface mount zener diode array
BAS40W-05 Diodes40V; 200mA surface mount schottky barrier diode. PN junction guard ring for transient and ESD protection
1.5KE130A Diodes111.00V; 1500W transient voltage suppressor
RS1K/KB Diodes800V; 1.0A surface mount fast recovery rectifier
MMSZ5250BS Diodes20V; 200mW surface mount zener diode. General purpose. Ideally suited for automated assembly processes
1N5711W Diodes70V; surface mount schottky barrier switching diode. Guard ring construction for transient protection
MMDT3906 Diodes40V; 200mA dual PNP small signal surface mount transistor. Ideal for low power application and switching
US1K Diodes800V; 1.0A surface mount ultra-fast rectifier
PBPC306 Diodes800V; 3.0A bridge rectifier
SMCJ75(C)A Diodes75V; 1500mW surface mount transient voltage suppressor
1.5KE110CA Diodes94.00V; 1500W transient voltage suppressor
SF81 Diodes50V; 8.0A super fast recovery rectifier and good for 200KHz power supplies
MMBZ5241B Diodes11V; 350mW surface mount zener diode. General purpose; Ideally suited for automated assembly processes
DDA143TU Diodes50V; 100mA PNP PRE-biased small signal dual surface mount transistor
BAT46W Diodes100V; 75mA surface mount schottky barrier diode. Guard ring construction for transient protection
PBPC307 Diodes1000V; 3.0A bridge rectifier
UG2003 Diodes200V; 2.0A ultra-fast recovery glass passivated rectifier; ultra fast switching for high efficiency
RS1A/B Diodes50V; 1.0A surface mount fast recovery rectifier
BAT54BRW-7 Diodes30V; 200mA surface mount schottky barrier diode array. PN junction guard ring for transient and ESD protection
MB25-1 Diodes100V; 25.0A high current silicon bridge rectifier
GBJ2501 Diodes100V; 25A glass passivated bridge rectifier
MMBZ5233BTS Diodes6.0V; 200mW triple surface mount zener diode array. Ideally suited for automated assembly

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