TC1030EPD同様の

  • TC1014-2.5VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
  • TC1014-2.7VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
  • TC1014-3.0VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0V.
  • TC1014-3.3VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3V.
  • TC1014-5.0VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0V.
  • TC1015-2.5VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
  • TC1015-2.7VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
  • TC1015-3.0VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0 V.

TC1030EPDデータシート規格

メーカー : TelCom Semiconductor 

パッキン : Plastic DIP 

ピン : 14 

温度 : 分 -40 °C | マックス 85 °C

サイズ : 29 KB

アプリケーション : Linear building block - quad low power operational amplifier. 

TC1030EPD PDFダウンロード